NTBGS2D5N06C onsemi
Виробник: onsemi
Description: POWER MOSFET, 60 V, 2.5 M?, 224
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 35A, 12V
Power Dissipation (Max): 3.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 175µA
Supplier Device Package: D2PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 30 V
Description: POWER MOSFET, 60 V, 2.5 M?, 224
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 169A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 35A, 12V
Power Dissipation (Max): 3.7W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 175µA
Supplier Device Package: D2PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 30 V
на замовлення 796 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 457 грн |
10+ | 395.23 грн |
100+ | 323.82 грн |
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Технічний опис NTBGS2D5N06C onsemi
Description: POWER MOSFET, 60 V, 2.5 M?, 224, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D²Pak (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 169A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 35A, 12V, Power Dissipation (Max): 3.7W (Ta), 136W (Tc), Vgs(th) (Max) @ Id: 4V @ 175µA, Supplier Device Package: D2PAK (TO-263), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 30 V.
Інші пропозиції NTBGS2D5N06C за ціною від 204.59 грн до 479.71 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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NTBGS2D5N06C | Виробник : onsemi | MOSFET NFET D2PAK7 60V 2.5MO |
на замовлення 796 шт: термін постачання 21-30 дні (днів) |
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NTBGS2D5N06C | Виробник : onsemi |
Description: POWER MOSFET, 60 V, 2.5 M?, 224 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 169A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 35A, 12V Power Dissipation (Max): 3.7W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 175µA Supplier Device Package: D2PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 30 V |
товар відсутній |