Технічний опис NTD3055L104-1G ON Semiconductor
Description: MOSFET N-CH 60V 12A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 104mOhm @ 6A, 5V, Power Dissipation (Max): 1.5W (Ta), 48W (Tj), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: IPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V.
Інші пропозиції NTD3055L104-1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| NTD3055L104-1G | Виробник : ON |
 10+ |
на замовлення 11325 шт: термін постачання 14-28 дні (днів) |
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NTD3055L104-1G | Виробник : ON Semiconductor |
Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) IPAK Tube |
товар відсутній |
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NTD3055L104-1G | Виробник : onsemi |
Description: MOSFET N-CH 60V 12A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 104mOhm @ 6A, 5V Power Dissipation (Max): 1.5W (Ta), 48W (Tj) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V |
товар відсутній |