NTD40N03RT4 onsemi
Виробник: onsemi
Description: MOSFET N-CH 25V 7.8A/32A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
Description: MOSFET N-CH 25V 7.8A/32A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
на замовлення 6670 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2219+ | 9.34 грн |
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Технічний опис NTD40N03RT4 onsemi
Description: MOSFET N-CH 25V 7.8A/32A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V, Power Dissipation (Max): 1.5W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V.
Інші пропозиції NTD40N03RT4 за ціною від 10.04 грн до 10.04 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||
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NTD40N03RT4 | Виробник : ONSEMI |
Description: ONSEMI - NTD40N03RT4 - NTD40N03RT4, SINGLE MOSFETS tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
на замовлення 6670 шт: термін постачання 21-31 дні (днів) |
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NTD40N03RT4 | Виробник : ON | TO-252/D-PAK |
на замовлення 30000 шт: термін постачання 14-28 дні (днів) |
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NTD40N03RT4 | Виробник : onsemi |
Description: MOSFET N-CH 25V 7.8A/32A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V Power Dissipation (Max): 1.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V |
товар відсутній |
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NTD40N03RT4 | Виробник : onsemi | MOSFET 25V 45A N-Channel |
товар відсутній |