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NTD60N02R-035

NTD60N02R-035 onsemi


ntd60n02r-d.pdf Виробник: onsemi
Description: MOSFET N-CH 25V 8.5A/32A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.25W (Ta), 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 20 V
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Технічний опис NTD60N02R-035 onsemi

Description: MOSFET N-CH 25V 8.5A/32A IPAK, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 32A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V, Power Dissipation (Max): 1.25W (Ta), 58W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: I-PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 20 V.

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NTD60N02R-035 NTD60N02R-035 Виробник : onsemi NTD60N02R_D-2318418.pdf MOSFET 25V 62A N-Channel
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