NTE466 NTE Electronics
Виробник: NTE ElectronicsCategory: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 40V; 50mA; 0.36W; TO218; Igt: 50mA
Mounting: THT
Case: TO218
Kind of package: bulk
Power dissipation: 0.36W
Polarisation: unipolar
Gate-source voltage: -40V
Gate current: 50mA
Drain-source voltage: 40V
Drain current: 50mA
Type of transistor: N-JFET
кількість в упаковці: 1 шт
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Технічний опис NTE466 NTE Electronics
Description: JFET N-CH 40V TO218, Packaging: Bag, Package / Case: TO-218-3, Mounting Type: Through Hole, FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V, Voltage - Breakdown (V(BR)GSS): 40 V, Supplier Device Package: TO-218, Drain to Source Voltage (Vdss): 40 V, Power - Max: 360 mW, Resistance - RDS(On): 25 Ohms, Voltage - Cutoff (VGS off) @ Id: 4 V @ 500 pA, Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 15 V.
Інші пропозиції NTE466
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NTE466 | Виробник : NTE Electronics, Inc |
Description: JFET N-CH 40V TO218 Packaging: Bag Package / Case: TO-218-3 Mounting Type: Through Hole FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: TO-218 Drain to Source Voltage (Vdss): 40 V Power - Max: 360 mW Resistance - RDS(On): 25 Ohms Voltage - Cutoff (VGS off) @ Id: 4 V @ 500 pA Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 15 V |
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NTE466 | Виробник : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 40V; 50mA; 0.36W; TO218; Igt: 50mA Mounting: THT Case: TO218 Kind of package: bulk Power dissipation: 0.36W Polarisation: unipolar Gate-source voltage: -40V Gate current: 50mA Drain-source voltage: 40V Drain current: 50mA Type of transistor: N-JFET |
товар відсутній |