NTMD4884NFR2G onsemi
Виробник: onsemiDescription: MOSFET N-CH 30V 3.3A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 15 V
на замовлення 43322 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1268+ | 15.92 грн |
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Технічний опис NTMD4884NFR2G onsemi
Description: MOSFET N-CH 30V 3.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 770mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 15 V.
Інші пропозиції NTMD4884NFR2G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| NTMD4884NFR2G |
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на замовлення 1260 шт: термін постачання 14-28 дні (днів) |
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NTMD4884NFR2G | Виробник : onsemi |
Description: MOSFET N-CH 30V 3.3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 15 V |
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