на замовлення 19966 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.67 грн |
| 17+ | 18.69 грн |
| 100+ | 7.79 грн |
| 1000+ | 5.48 грн |
| 2500+ | 5.15 грн |
| 10000+ | 4.69 грн |
| 20000+ | 4.36 грн |
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Технічний опис NTR1P02LT3G onsemi
Description: MOSFET P-CH 20V 1.3A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V.
Інші пропозиції NTR1P02LT3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| NTR1P02LT3G | Виробник : ONSEMI |
 NTR1P02LT3G SMD P channel transistors |
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NTR1P02LT3G | Виробник : onsemi |
Description: MOSFET P-CH 20V 1.3A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V |
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NTR1P02LT3G | Виробник : onsemi |
Description: MOSFET P-CH 20V 1.3A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 750mA, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 5 V |
товар відсутній |