NTTFS6H888NTAG onsemi
Виробник: onsemiDescription: T8 80V U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Power Dissipation (Max): 2.9W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V
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Технічний опис NTTFS6H888NTAG onsemi
Description: T8 80V U8FL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V, Power Dissipation (Max): 2.9W (Ta), 18W (Tc), Vgs(th) (Max) @ Id: 4V @ 15µA, Supplier Device Package: 8-WDFN (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V.
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NTTFS6H888NTAG | Виробник : onsemi |
Description: T8 80V U8FL Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V Power Dissipation (Max): 2.9W (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 4V @ 15µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 40 V |
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