на замовлення 2781 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3+ | 125.54 грн |
10+ | 103.13 грн |
100+ | 71.08 грн |
250+ | 65.5 грн |
500+ | 59.38 грн |
1000+ | 54.14 грн |
3000+ | 46.7 грн |
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Технічний опис NTTYS009N08HLTWG onsemi
Description: T8 80V N-CH LL IN LFPAK33 PACKAG, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 58A (Tc), Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V, Power Dissipation (Max): 3.2W (Ta), 73W (Tc), Vgs(th) (Max) @ Id: 2V @ 70µA, Supplier Device Package: 8-LFPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1402 pF @ 40 V.
Інші пропозиції NTTYS009N08HLTWG
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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NTTYS009N08HLTWG | Виробник : onsemi |
Description: T8 80V N-CH LL IN LFPAK33 PACKAG Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 2V @ 70µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1402 pF @ 40 V |
товар відсутній |
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NTTYS009N08HLTWG | Виробник : onsemi |
Description: T8 80V N-CH LL IN LFPAK33 PACKAG Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 2V @ 70µA Supplier Device Package: 8-LFPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1402 pF @ 40 V |
товар відсутній |