NVD360N65S3T4G onsemi
Виробник: onsemiDescription: SF3 EASY AUTO 360MOHM DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 756 pF @ 400 V
на замовлення 4914 шт:
термін постачання 21-31 дні (днів)
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Технічний опис NVD360N65S3T4G onsemi
Description: SF3 EASY AUTO 360MOHM DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 200µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 756 pF @ 400 V.
Інші пропозиції NVD360N65S3T4G
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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NVD360N65S3T4G | Виробник : onsemi |
Description: SF3 EASY AUTO 360MOHM DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 756 pF @ 400 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| NVD360N65S3T4G | Виробник : ON Semiconductor |
NVD360N65S3T4G |
товар відсутній |
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| NVD360N65S3T4G | Виробник : onsemi |
MOSFET Single N-Channel Power MOSFET SUPERFET III, Easy Drive, 650 V , 10 A, 360 mohm, DPAK |
товар відсутній |