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NVD6414ANT4G-VF01 ON Semiconductor


ntd6414an-d.pdf Виробник: ON Semiconductor
Trans MOSFET N-CH 100V 32A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
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Технічний опис NVD6414ANT4G-VF01 ON Semiconductor

Description: MOSFET N-CH 100V 32A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 37mOhm @ 32A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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NVD6414ANT4G-VF01 NVD6414ANT4G-VF01 Виробник : onsemi Description: MOSFET N-CH 100V 32A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NVD6414ANT4G-VF01 NVD6414ANT4G-VF01 Виробник : onsemi NTD6414AN_D-1813801.pdf MOSFET NFET DPAK 100V 34A 38MO
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