на замовлення 11900 шт:
термін постачання 1106-1115 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 115.47 грн |
| 10+ | 94.72 грн |
| 100+ | 65.5 грн |
| 250+ | 60.65 грн |
| 500+ | 55.07 грн |
| 1000+ | 47.16 грн |
| 1500+ | 44.77 грн |
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Технічний опис NVMFD5C680NLWFT1G onsemi
Description: MOSFET 2N-CH 60V 7.5A/26A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 19W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 26A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V, Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 13µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVMFD5C680NLWFT1G
| Фото | Назва | Виробник | Інформація |
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NVMFD5C680NLWFT1G | Виробник : onsemi |
 Description: MOSFET 2N-CH 60V 7.5A/26A 8DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 19W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 26A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 13µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
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NVMFD5C680NLWFT1G | Виробник : onsemi |
Description: MOSFET 2N-CH 60V 7.5A/26A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 19W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 26A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 13µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |