на замовлення 1500 шт:
термін постачання 224-233 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 89.39 грн |
| 10+ | 72.77 грн |
| 100+ | 49.47 грн |
| 500+ | 41.94 грн |
| 1000+ | 34.15 грн |
| 1500+ | 32.1 грн |
| 3000+ | 30.58 грн |
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Технічний опис NVMFWS024N06CT1G onsemi
Description: T6 60V SG HIGHER RDS-ON PORTFOLI, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V, Power Dissipation (Max): 3.4W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 4V @ 20µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції NVMFWS024N06CT1G
| Фото | Назва | Виробник | Інформація |
Доступність |
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NVMFWS024N06CT1G | Виробник : onsemi |
 Description: T6 60V SG HIGHER RDS-ON PORTFOLIPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V Power Dissipation (Max): 3.4W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V Qualification: AEC-Q101 |
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NVMFWS024N06CT1G | Виробник : onsemi |
Description: T6 60V SG HIGHER RDS-ON PORTFOLI Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V Power Dissipation (Max): 3.4W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V Qualification: AEC-Q101 |
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