на замовлення 3000 шт:
термін постачання 168-177 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 172.13 грн |
| 10+ | 141.27 грн |
| 100+ | 97.47 грн |
| 250+ | 90.13 грн |
| 500+ | 82.12 грн |
| 1000+ | 70.1 грн |
| 3000+ | 64.29 грн |
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Технічний опис NVMJD010N10MCLTWG onsemi
Description: PTNG 100V N-CH LL IN LFPAK56 DUA, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), 84W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V, Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 97µA, Supplier Device Package: 8-LFPAK, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції NVMJD010N10MCLTWG
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| NVMJD010N10MCLTWG | Виробник : ON Semiconductor |
 N-Channel Power MOSFET Automotive AEC-Q101 |
товар відсутній |
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NVMJD010N10MCLTWG | Виробник : onsemi |
Description: PTNG 100V N-CH LL IN LFPAK56 DUA Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 84W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V Vgs(th) (Max) @ Id: 3V @ 97µA Supplier Device Package: 8-LFPAK Grade: Automotive Qualification: AEC-Q101 |
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NVMJD010N10MCLTWG | Виробник : onsemi |
Description: PTNG 100V N-CH LL IN LFPAK56 DUA Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 84W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V Vgs(th) (Max) @ Id: 3V @ 97µA Supplier Device Package: 8-LFPAK Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |