на замовлення 1500 шт:
термін постачання 133-142 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.67 грн |
| 10+ | 62.36 грн |
| 100+ | 42.21 грн |
| 500+ | 35.73 грн |
| 1000+ | 29.13 грн |
| 1500+ | 27.41 грн |
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Технічний опис NVTFS024N06CTAG onsemi
Description: MOSFET N-CH 60V 7A/24A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 24A (Tc), Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V, Power Dissipation (Max): 2.5W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 4V @ 20µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції NVTFS024N06CTAG
| Фото | Назва | Виробник | Інформація |
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NVTFS024N06CTAG | Виробник : ON Semiconductor |
 Single N Channel Power MOSFET |
товар відсутній |
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NVTFS024N06CTAG | Виробник : onsemi |
Description: MOSFET N-CH 60V 7A/24A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V Qualification: AEC-Q101 |
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NVTFS024N06CTAG | Виробник : onsemi |
Description: MOSFET N-CH 60V 7A/24A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |