P8B30HP2-5071 SHINDENGEN
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 300V; 8A; Idm: 32A; 54W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 300V; 8A; Idm: 32A; 54W
Type of transistor: N-MOSFET
Technology: Hi-PotMOS2
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 54W
Case: FB (TO252AA)
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
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Технічний опис P8B30HP2-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 300V; 8A; Idm: 32A; 54W, Type of transistor: N-MOSFET, Technology: Hi-PotMOS2, Polarisation: unipolar, Drain-source voltage: 300V, Drain current: 8A, Pulsed drain current: 32A, Power dissipation: 54W, Case: FB (TO252AA), Gate-source voltage: ±30V, On-state resistance: 0.5Ω, Mounting: SMD, Gate charge: 9.8nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції P8B30HP2-5071
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
P8B30HP2-5071 | Виробник : Shindengen | MOSFET Hi-PotMOS series Power MOSFET SMD |
товар відсутній |
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P8B30HP2-5071 | Виробник : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 300V; 8A; Idm: 32A; 54W Type of transistor: N-MOSFET Technology: Hi-PotMOS2 Polarisation: unipolar Drain-source voltage: 300V Drain current: 8A Pulsed drain current: 32A Power dissipation: 54W Case: FB (TO252AA) Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 9.8nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |