PBSS4160PANP-QX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: PBSS4160PANP-Q/SOT1118/HUSON6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A / 340mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 100mA, 2V / 170 @ 100mA, 2V
Frequency - Transition: 175MHz, 125MHz
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Qualification: AEC-Q101
Description: PBSS4160PANP-Q/SOT1118/HUSON6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN, PNP
Operating Temperature: 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A / 340mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 100mA, 2V / 170 @ 100mA, 2V
Frequency - Transition: 175MHz, 125MHz
Supplier Device Package: 6-HUSON (2x2)
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис PBSS4160PANP-QX Nexperia USA Inc.
Description: PBSS4160PANP-Q/SOT1118/HUSON6, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN, PNP, Operating Temperature: 150°C (TJ), Power - Max: 370mW, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A / 340mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 290 @ 100mA, 2V / 170 @ 100mA, 2V, Frequency - Transition: 175MHz, 125MHz, Supplier Device Package: 6-HUSON (2x2), Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PBSS4160PANP-QX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
PBSS4160PANP-QX | Виробник : Nexperia |
 Bipolar Transistors - BJT PBSS4160PANP-Q/SOT1118/HUSON6 |
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