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PBSS4350T-QR NEXPERIA


pbss4350t.pdf Виробник: NEXPERIA
Trans GP BJT NPN 50V 2A 1200mW 3-Pin SOT-23
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Технічний опис PBSS4350T-QR NEXPERIA

Description: PBSS4350T-Q/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V, Frequency - Transition: 100MHz, Supplier Device Package: TO-236AB, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 1.2 W, Qualification: AEC-Q101.

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PBSS4350T-QR PBSS4350T-QR Виробник : Nexperia USA Inc. PBSS4350T-Q.pdf Description: PBSS4350T-Q/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1.2 W
Qualification: AEC-Q101
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PBSS4350T-QR PBSS4350T-QR Виробник : Nexperia PBSS4350T_Q-2950431.pdf Bipolar Transistors - BJT PBSS4350T-Q/SOT23/TO-236AB
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