Технічний опис PDTD113ZT-QVL Nexperia
Description: TRANS PREBIAS NPN 50V TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 10 kOhms, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PDTD113ZT-QVL
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| PDTD113ZT-QVL | Виробник : NEXPERIA |
 Trans Digital BJT NPN 50V 500mA 250mW 3-Pin TO-236AB T/R |
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PDTD113ZT-QVL | Виробник : Nexperia USA Inc. |
Description: TRANS PREBIAS NPN 50V TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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PDTD113ZT-QVL | Виробник : Nexperia |
Digital Transistors PDTD113ZT-Q/SOT23/TO-236AB |
товар відсутній |