PEMD6,115 Nexperia
Виробник: NexperiaBipolar Transistors - Pre-Biased NRND for Automotive Applications PEMD6/SOT666/SOT6
на замовлення 2501 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 36.61 грн |
| 12+ | 27.33 грн |
| 100+ | 14.82 грн |
| 500+ | 10.08 грн |
| 1000+ | 7.81 грн |
| 4000+ | 6.94 грн |
| 8000+ | 5.94 грн |
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Технічний опис PEMD6,115 Nexperia
Description: TRANS PREBIAS 1NPN 1PNP SOT666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V, Resistor - Base (R1): 4.7kOhms, Supplier Device Package: SOT-666, Part Status: Not For New Designs.
Інші пропозиції PEMD6,115
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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PEMD6,115 | Виробник : NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT666 Power dissipation: 300mW Kind of transistor: BRT; complementary pair Base resistor: 4.7kΩ Frequency: 180...230MHz Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN / PNP Kind of package: reel; tape |
товар відсутній |
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PEMD6,115 | Виробник : Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP SOT666 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SOT-666 Part Status: Not For New Designs |
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PEMD6,115 | Виробник : Nexperia USA Inc. |
Description: TRANS PREBIAS 1NPN 1PNP SOT666 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 300mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SOT-666 Part Status: Not For New Designs |
товар відсутній |
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PEMD6,115 | Виробник : NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SOT666 Power dissipation: 300mW Kind of transistor: BRT; complementary pair Base resistor: 4.7kΩ Frequency: 180...230MHz Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Type of transistor: NPN / PNP Kind of package: reel; tape |
товар відсутній |