PHB110NQ08T,118 NXP
Виробник: NXPDescription: NXP - PHB110NQ08T,118 - INTEGRATED PASSIVE FILTERS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 321+ | 113.26 грн |
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Технічний опис PHB110NQ08T,118 NXP
Description: MOSFET N-CH 75V 75A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 113.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 25 V.
Інші пропозиції PHB110NQ08T,118
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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PHB110NQ08T,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 75V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 113.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 25 V |
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PHB110NQ08T,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 75V 75A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 113.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4860 pF @ 25 V |
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PHB110NQ08T,118 | Виробник : Nexperia |
MOSFET PHB110NQ08T/SOT404/D2PAK |
товар відсутній |