PHB29N08T,118 NXP Semiconductors

Description: NEXPERIA PHB29N08T - 27A, 75V, 0, Packaging: Bulk, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 27A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 14A, 11V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 5V @ 2mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 11V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 75 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V.