на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 30.38 грн |
| 13+ | 24.58 грн |
| 100+ | 14.58 грн |
| 1000+ | 8.19 грн |
| 3000+ | 7.53 грн |
| 9000+ | 6.59 грн |
| 24000+ | 6.06 грн |
Відгуки про товар
Написати відгук
Технічний опис PIMN32PAS-QX Nexperia
Description: PIMN32PAS-Q/SOT1118/HUSON6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased, Power - Max: 360mW, Current - Collector (Ic) (Max): 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V, Frequency - Transition: 210MHz, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: DFN2020D-6, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PIMN32PAS-QX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| PIMN32PAS-QX | Виробник : Nexperia USA Inc. |
Description: PIMN32PAS-Q/SOT1118/HUSON6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased Power - Max: 360mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Frequency - Transition: 210MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: DFN2020D-6 Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
||
| PIMN32PAS-QX | Виробник : Nexperia USA Inc. |
Description: PIMN32PAS-Q/SOT1118/HUSON6 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased Power - Max: 360mW Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Frequency - Transition: 210MHz Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: DFN2020D-6 Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |