PJC7410_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V
Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V
на замовлення 2628 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
10+ | 30.18 грн |
14+ | 20.69 грн |
100+ | 10.44 грн |
500+ | 8.68 грн |
1000+ | 6.76 грн |
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Технічний опис PJC7410_R1_00001 Panjit International Inc.
Description: 20V N-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-323, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V.
Інші пропозиції PJC7410_R1_00001 за ціною від 4.98 грн до 33.17 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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PJC7410_R1_00001 | Виробник : Panjit | MOSFET 20V N-Channel Enhancement Mode MOSFET |
на замовлення 2765 шт: термін постачання 21-30 дні (днів) |
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PJC7410_R1_00001 | Виробник : Panjit International Inc. |
Description: 20V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V |
товар відсутній |
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PJC7410-R1-00001 | Виробник : Panjit | MOSFET SOT-323/MOS/SOT/NFET-20TAMN |
товар відсутній |