на замовлення 6000 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 207.18 грн |
| 10+ | 171.21 грн |
| 25+ | 140.87 грн |
| 100+ | 120.84 грн |
| 250+ | 114.16 грн |
| 500+ | 107.49 грн |
| 1000+ | 92.13 грн |
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Технічний опис PJMD390N65EC_L2_00001 Panjit
Description: 650V SUPER JUNCITON MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V, Power Dissipation (Max): 87.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V.
Інші пропозиції PJMD390N65EC_L2_00001 за ціною від 262.42 грн до 512.02 грн
| Фото | Назва | Виробник | Інформація |
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PJMD390N65EC_L2_00001 | Виробник : Panjit International Inc. |
 Description: 650V SUPER JUNCITON MOSFETPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V Power Dissipation (Max): 87.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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PJMD390N65EC_L2_00001 | Виробник : Panjit International Inc. |
Description: 650V SUPER JUNCITON MOSFET Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V Power Dissipation (Max): 87.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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PJMD390N65EC_L2_00001 | Виробник : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO252AA Case: TO252AA Mounting: SMD Kind of package: reel; tape Drain-source voltage: 650V Drain current: 10A On-state resistance: 390mΩ Type of transistor: N-MOSFET Power dissipation: 87.5W Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 22A кількість в упаковці: 1 шт |
товар відсутній |
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PJMD390N65EC_L2_00001 | Виробник : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO252AA Case: TO252AA Mounting: SMD Kind of package: reel; tape Drain-source voltage: 650V Drain current: 10A On-state resistance: 390mΩ Type of transistor: N-MOSFET Power dissipation: 87.5W Polarisation: unipolar Gate charge: 19nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 22A |
товар відсутній |