PJMD900N60EC_L2_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: 600V SUPER JUNCITON MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Power Dissipation (Max): 47.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 400 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 59.36 грн |
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Технічний опис PJMD900N60EC_L2_00001 Panjit International Inc.
Description: 600V SUPER JUNCITON MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V, Power Dissipation (Max): 47.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 400 V.
Інші пропозиції PJMD900N60EC_L2_00001 за ціною від 50.22 грн до 131.88 грн
| Фото | Назва | Виробник | Інформація |
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PJMD900N60EC_L2_00001 | Виробник : Panjit |
MOSFET 22V,ESD Protection,SOT-23,UNI |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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PJMD900N60EC_L2_00001 | Виробник : Panjit International Inc. |
Description: 600V SUPER JUNCITON MOSFET Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V Power Dissipation (Max): 47.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 400 V |
на замовлення 5835 шт: термін постачання 21-31 дні (днів) |
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PJMD900N60EC_L2_00001 | Виробник : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 9.7A Power dissipation: 47.5W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 8.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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PJMD900N60EC_L2_00001 | Виробник : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 9.7A Power dissipation: 47.5W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 8.8nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |