PJQ4409P_R2_00001 Panjit International Inc.
Виробник: Panjit International Inc.Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V
Power Dissipation (Max): 2W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
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Технічний опис PJQ4409P_R2_00001 Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 24A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 10V, Power Dissipation (Max): 2W (Ta), 30W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN3333-8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V.
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| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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PJQ4409P_R2_00001 | Виробник : Panjit |
MOSFET 30V P-Channel Enhancement Mode MOSFET |
товар відсутній |
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PJQ4409P-R2-00001 | Виробник : Panjit |
MOSFET |
товар відсутній |