PJQ5844-AU_R2_000A1 PanJit Semiconductor
Виробник: PanJit SemiconductorCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 28A; Idm: 180A; 19.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28A
Pulsed drain current: 180A
Power dissipation: 19.2W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: tape
Kind of channel: enhanced
кількість в упаковці: 30000 шт
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Технічний опис PJQ5844-AU_R2_000A1 PanJit Semiconductor
Description: MOSFET 2N-CH 40V 10A/45A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), 38.5W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1759pF @ 25V, Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN5060B-8.
Інші пропозиції PJQ5844-AU_R2_000A1
| Фото | Назва | Виробник | Інформація |
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PJQ5844-AU_R2_000A1 | Виробник : Panjit International Inc. |
Description: MOSFET 2N-CH 40V 10A/45A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 38.5W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1759pF @ 25V Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060B-8 |
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PJQ5844-AU_R2_000A1 | Виробник : Panjit International Inc. |
Description: MOSFET 2N-CH 40V 10A/45A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 38.5W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1759pF @ 25V Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060B-8 |
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PJQ5844-AU_R2_000A1 | Виробник : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 28A; Idm: 180A; 19.2W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 28A Pulsed drain current: 180A Power dissipation: 19.2W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: SMD Gate charge: 17nC Kind of package: tape Kind of channel: enhanced |
товар відсутній |