Технічний опис PMBT3906-QR NEXPERIA
Description: PMBT3906-Q/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V, Frequency - Transition: 250MHz, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Current - Collector (Ic) (Max): 200 mA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 250 mW, Qualification: AEC-Q101.
Інші пропозиції PMBT3906-QR
| Фото | Назва | Виробник | Інформація |
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PMBT3906-QR | Виробник : Nexperia |
 Trans GP BJT PNP 40V 0.2A 250mW Automotive |
товар відсутній |
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PMBT3906-QR | Виробник : Nexperia USA Inc. |
Description: PMBT3906-Q/SOT23/TO-236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 250 mW Qualification: AEC-Q101 |
товар відсутній |
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PMBT3906-QR | Виробник : Nexperia |
Bipolar Transistors - BJT PMBT3906-Q/SOT23/TO-236AB |
товар відсутній |