PMCM950ENEZ Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 4.8A 9WLCSP
Packaging: Cut Tape (CT)
Package / Case: 9-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 3A, 10V
Power Dissipation (Max): 780mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 9-WLCSP (1.48x1.48)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 30 V
Description: MOSFET N-CH 60V 4.8A 9WLCSP
Packaging: Cut Tape (CT)
Package / Case: 9-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 41mOhm @ 3A, 10V
Power Dissipation (Max): 780mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 9-WLCSP (1.48x1.48)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 30 V
на замовлення 4291 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
8+ | 38.18 грн |
10+ | 31.35 грн |
100+ | 21.81 грн |
500+ | 15.98 грн |
1000+ | 12.99 грн |
2000+ | 11.61 грн |
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Технічний опис PMCM950ENEZ Nexperia USA Inc.
Description: MOSFET N-CH 60V 4.8A 9WLCSP, Packaging: Tape & Reel (TR), Package / Case: 9-XFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), Rds On (Max) @ Id, Vgs: 41mOhm @ 3A, 10V, Power Dissipation (Max): 780mW (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 9-WLCSP (1.48x1.48), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 30 V.
Інші пропозиції PMCM950ENEZ за ціною від 13.65 грн до 54.77 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||
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PMCM950ENEZ | Виробник : Nexperia | MOSFET PMCM950ENE/NAX000/NONE |
на замовлення 26227 шт: термін постачання 21-30 дні (днів) |
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PMCM950ENEZ | Виробник : Nexperia | 60 V, N-channel Trench MOSFET |
товар відсутній |
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PMCM950ENEZ | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 4.8A 9WLCSP Packaging: Tape & Reel (TR) Package / Case: 9-XFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Rds On (Max) @ Id, Vgs: 41mOhm @ 3A, 10V Power Dissipation (Max): 780mW (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 9-WLCSP (1.48x1.48) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 30 V |
товар відсутній |