на замовлення 242550 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2929+ | 6.65 грн |
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Технічний опис PMCXB1000UEZ NXP Semiconductors
Description: MOSFET N/P-CH 30V 0.59A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 285mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 590mA (Ta), 410mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V, 43.2pF @ 15V, Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V, 1.2nC @ 4.5V, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN1010B-6, Part Status: Active.
Інші пропозиції PMCXB1000UEZ за ціною від 6.33 грн до 33.25 грн
| Фото | Назва | Виробник | Інформація |
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PMCXB1000UEZ | Виробник : Nexperia USA Inc. |
 Description: MOSFET N/P-CH 30V 0.59A 6DFNPackaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 285mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 590mA (Ta), 410mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V, 43.2pF @ 15V Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V, 1.2nC @ 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1010B-6 Part Status: Active |
на замовлення 3095 шт: термін постачання 21-31 дні (днів) |
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PMCXB1000UEZ | Виробник : Nexperia |
MOSFET PMCXB1000UE/SOT1216/DFN1010B-6 |
на замовлення 7915 шт: термін постачання 21-30 дні (днів) |
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PMCXB1000UEZ | Виробник : NEXPERIA |
Trans MOSFET N/P-CH 30V 0.59A/0.41A 6-Pin DFN-B EP T/R |
товар відсутній |
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| PMCXB1000UEZ | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 30/-30V; 590/-410mA Mounting: SMD Case: DFN1010B-6; SOT1216 Drain-source voltage: 30/-30V Drain current: 590/-410mA On-state resistance: 670mΩ/1.4Ω Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 1.05/1.2nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±8/±8V Pulsed drain current: -1.7...2.3A кількість в упаковці: 5000 шт |
товар відсутній |
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PMCXB1000UEZ | Виробник : Nexperia USA Inc. |
Description: MOSFET N/P-CH 30V 0.59A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 285mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 590mA (Ta), 410mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 30.3pF @ 15V, 43.2pF @ 15V Rds On (Max) @ Id, Vgs: 670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.05nC @ 4.5V, 1.2nC @ 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1010B-6 Part Status: Active |
товар відсутній |
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| PMCXB1000UEZ | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 30/-30V; 590/-410mA Mounting: SMD Case: DFN1010B-6; SOT1216 Drain-source voltage: 30/-30V Drain current: 590/-410mA On-state resistance: 670mΩ/1.4Ω Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 1.05/1.2nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±8/±8V Pulsed drain current: -1.7...2.3A |
товар відсутній |