PMCXB900UEZ Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 0.6A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 265mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Description: MOSFET N/P-CH 20V 0.6A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 265mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
5000+ | 6.54 грн |
10000+ | 5.67 грн |
25000+ | 5.58 грн |
50000+ | 4.93 грн |
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Технічний опис PMCXB900UEZ Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 0.6A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 265mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA, Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V, Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN1010B-6.
Інші пропозиції PMCXB900UEZ за ціною від 5.39 грн до 27.43 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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PMCXB900UEZ | Виробник : Nexperia USA Inc. |
Description: MOSFET N/P-CH 20V 0.6A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 265mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 600mA, 500mA Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1010B-6 |
на замовлення 107784 шт: термін постачання 21-31 дні (днів) |
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PMCXB900UEZ | Виробник : Nexperia | MOSFET PMCXB900UE/SOT1216/DFN1010B-6 |
на замовлення 11099 шт: термін постачання 21-30 дні (днів) |
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PMCXB900UEZ | Виробник : NEXPERIA |
Description: NEXPERIA - PMCXB900UEZ - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
на замовлення 1684401 шт: термін постачання 21-31 дні (днів) |
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PMCXB900UEZ | Виробник : NEXPERIA | Trans MOSFET N/P-CH 20V 0.6A/0.5A 6-Pin DFN-B EP T/R |
товар відсутній |
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PMCXB900UEZ | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 400/-300mA Pulsed drain current: -2...2.5A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8/±8V On-state resistance: 1/2.1Ω Mounting: SMD Gate charge: 700pC/2.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5000 шт |
товар відсутній |
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PMCXB900UEZ | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 400/-300mA Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 400/-300mA Pulsed drain current: -2...2.5A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8/±8V On-state resistance: 1/2.1Ω Mounting: SMD Gate charge: 700pC/2.1nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |