PMDPB70XP,115 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET 2P-CH 30V 2.9A 6HUSON
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 490mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V
Rds On (Max) @ Id, Vgs: 87mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.29 грн |
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Технічний опис PMDPB70XP,115 Nexperia USA Inc.
Description: MOSFET 2P-CH 30V 2.9A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 490mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.9A, Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V, Rds On (Max) @ Id, Vgs: 87mOhm @ 2.9A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-HUSON (2x2), Part Status: Active.
Інші пропозиції PMDPB70XP,115 за ціною від 7.39 грн до 37.6 грн
| Фото | Назва | Виробник | Інформація |
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PMDPB70XP,115 | Виробник : Nexperia USA Inc. |
Description: MOSFET 2P-CH 30V 2.9A 6HUSON Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 490mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.9A Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 15V Rds On (Max) @ Id, Vgs: 87mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
на замовлення 3744 шт: термін постачання 21-31 дні (днів) |
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PMDPB70XP,115 | Виробник : Nexperia |
MOSFET PMDPB70XP/SOT1118/HUSON6 |
на замовлення 30278 шт: термін постачання 21-30 дні (днів) |
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| PMDPB70XP,115 | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -1.9A; Idm: -11.6A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.9A Pulsed drain current: -11.6A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 137mΩ Mounting: SMD Gate charge: 7.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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| PMDPB70XP,115 | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -1.9A; Idm: -11.6A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.9A Pulsed drain current: -11.6A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 137mΩ Mounting: SMD Gate charge: 7.8nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |