Технічний опис PMDPB85UPE,115 NEXPERIA
Description: MOSFET 2P-CH 20V 2.9A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 515mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.9A, Input Capacitance (Ciss) (Max) @ Vds: 514pF @ 10V, Rds On (Max) @ Id, Vgs: 103mOhm @ 1.3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: 6-HUSON (2x2).
Інші пропозиції PMDPB85UPE,115
| Фото | Назва | Виробник | Інформація |
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| PMDPB85UPE,115 | Виробник : NEXPERIA |
 Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -1.8A; Idm: -11.6A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -11.6A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±8V On-state resistance: 144mΩ Mounting: SMD Gate charge: 8.1nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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PMDPB85UPE,115 | Виробник : Nexperia USA Inc. |
Description: MOSFET 2P-CH 20V 2.9A 6HUSON Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 515mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A Input Capacitance (Ciss) (Max) @ Vds: 514pF @ 10V Rds On (Max) @ Id, Vgs: 103mOhm @ 1.3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 6-HUSON (2x2) |
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PMDPB85UPE,115 | Виробник : Nexperia USA Inc. |
Description: MOSFET 2P-CH 20V 2.9A 6HUSON Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 515mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A Input Capacitance (Ciss) (Max) @ Vds: 514pF @ 10V Rds On (Max) @ Id, Vgs: 103mOhm @ 1.3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 6-HUSON (2x2) |
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PMDPB85UPE,115 | Виробник : Nexperia |
MOSFET PMDPB85UPE/SOT1118/HUSON6 |
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| PMDPB85UPE,115 | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -20V; -1.8A; Idm: -11.6A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.8A Pulsed drain current: -11.6A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±8V On-state resistance: 144mΩ Mounting: SMD Gate charge: 8.1nC Kind of package: reel; tape Kind of channel: enhanced |
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