PMDPB95XNE2X NXP Semiconductors
Виробник: NXP SemiconductorsDescription: MOSFET 30V
Packaging: Bulk
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 510mW (Ta), 8.33W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 258pF @ 15V
Rds On (Max) @ Id, Vgs: 99mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-HUSON (2x2)
на замовлення 440932 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2818+ | 7.24 грн |
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Технічний опис PMDPB95XNE2X NXP Semiconductors
Description: MOSFET 2N-CH 30V 2.7A 6HUSON, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 510mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 258pF @ 15V, Rds On (Max) @ Id, Vgs: 99mOhm @ 2.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 6-HUSON (2x2), Part Status: Active.
Інші пропозиції PMDPB95XNE2X за ціною від 6.79 грн до 34.65 грн
| Фото | Назва | Виробник | Інформація |
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PMDPB95XNE2X | Виробник : Nexperia USA Inc. |
Description: MOSFET 2N-CH 30V 2.7A 6HUSON Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 510mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 258pF @ 15V Rds On (Max) @ Id, Vgs: 99mOhm @ 2.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
на замовлення 2928 шт: термін постачання 21-31 дні (днів) |
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PMDPB95XNE2X | Виробник : Nexperia |
MOSFET PMDPB95XNE2/SOT1118/HUSON6 |
на замовлення 8325 шт: термін постачання 21-30 дні (днів) |
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PMDPB95XNE2X | Виробник : NEXPERIA |
Trans MOSFET N-CH 30V 2.7A 6-Pin HUSON EP T/R |
товар відсутній |
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| PMDPB95XNE2X | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 1.7A; Idm: 11A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.7A Pulsed drain current: 11A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 4.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 3000 шт |
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PMDPB95XNE2X | Виробник : Nexperia USA Inc. |
Description: MOSFET 2N-CH 30V 2.7A 6HUSON Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 510mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 258pF @ 15V Rds On (Max) @ Id, Vgs: 99mOhm @ 2.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 6-HUSON (2x2) Part Status: Active |
товар відсутній |
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| PMDPB95XNE2X | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 30V; 1.7A; Idm: 11A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.7A Pulsed drain current: 11A Case: DFN2020-6; HUSON6; SOT1118 Gate-source voltage: ±12V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 4.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |