PMDXB1200UPEZ NEXPERIA
Виробник: NEXPERIA
Description: NEXPERIA - PMDXB1200UPEZ - Dual-MOSFET, p-Kanal, 30 V, 30 V, 410 mA, 410 mA, 1.2 ohm
tariffCode: 85412100
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 410mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 410mA
Drain-Source-Durchgangswiderstand, p-Kanal: 1.2ohm
Verlustleistung, p-Kanal: 285mW
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: DFN1010B
Anzahl der Pins: 6Pins
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 1.2ohm
productTraceability: No
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 285mW
Betriebstemperatur, max.: 150°C
Description: NEXPERIA - PMDXB1200UPEZ - Dual-MOSFET, p-Kanal, 30 V, 30 V, 410 mA, 410 mA, 1.2 ohm
tariffCode: 85412100
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 410mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 30V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 410mA
Drain-Source-Durchgangswiderstand, p-Kanal: 1.2ohm
Verlustleistung, p-Kanal: 285mW
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: DFN1010B
Anzahl der Pins: 6Pins
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 1.2ohm
productTraceability: No
Kanaltyp: p-Kanal
Verlustleistung, n-Kanal: 285mW
Betriebstemperatur, max.: 150°C
на замовлення 2520 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
100+ | 9.04 грн |
500+ | 7.01 грн |
1000+ | 5.25 грн |
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Технічний опис PMDXB1200UPEZ NEXPERIA
Description: NEXPERIA - PMDXB1200UPEZ - Dual-MOSFET, p-Kanal, 30 V, 30 V, 410 mA, 410 mA, 1.2 ohm, tariffCode: 85412100, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 410mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 30V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 410mA, Drain-Source-Durchgangswiderstand, p-Kanal: 1.2ohm, Verlustleistung, p-Kanal: 285mW, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: DFN1010B, Anzahl der Pins: 6Pin(s), Produktpalette: Multicomp Pro RJ45 Adapter, Drain-Source-Durchgangswiderstand, n-Kanal: 1.2ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Verlustleistung, n-Kanal: 285mW, Betriebstemperatur, max.: 150°C.
Інші пропозиції PMDXB1200UPEZ за ціною від 5.19 грн до 27.43 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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PMDXB1200UPEZ | Виробник : NEXPERIA |
Description: NEXPERIA - PMDXB1200UPEZ - Dual-MOSFET, p-Kanal, 30 V, 30 V, 410 mA, 410 mA, 1.2 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 410mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 410mA Drain-Source-Durchgangswiderstand, p-Kanal: 1.2ohm Verlustleistung, p-Kanal: 285mW Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: DFN1010B Anzahl der Pins: 6Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter Drain-Source-Durchgangswiderstand, n-Kanal: 1.2ohm productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 285mW Betriebstemperatur, max.: 150°C |
на замовлення 1520 шт: термін постачання 21-31 дні (днів) |
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PMDXB1200UPEZ | Виробник : Nexperia USA Inc. |
Description: MOSFET 2P-CH 30V 0.41A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 285mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 410mA Input Capacitance (Ciss) (Max) @ Vds: 43.2pF @ 15V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1010B-6 Part Status: Active |
на замовлення 947 шт: термін постачання 21-31 дні (днів) |
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PMDXB1200UPEZ | Виробник : Nexperia | MOSFET PMDXB1200UPE/SOT1216/DFN1010B- |
на замовлення 13743 шт: термін постачання 21-30 дні (днів) |
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PMDXB1200UPEZ | Виробник : NEXPERIA |
Description: NEXPERIA - PMDXB1200UPEZ - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
на замовлення 1798650 шт: термін постачання 21-31 дні (днів) |
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PMDXB1200UPEZ | Виробник : NEXPERIA | Trans MOSFET P-CH 30V 410A 6-Pin DFN-B EP T/R |
товар відсутній |
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PMDXB1200UPEZ | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -260mA; Idm: -1.7A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -30V Drain current: -260mA Pulsed drain current: -1.7A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8V On-state resistance: 2.4Ω Mounting: SMD Gate charge: 1.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 5000 шт |
товар відсутній |
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PMDXB1200UPEZ | Виробник : Nexperia USA Inc. |
Description: MOSFET 2P-CH 30V 0.41A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 285mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 410mA Input Capacitance (Ciss) (Max) @ Vds: 43.2pF @ 15V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 410mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN1010B-6 Part Status: Active |
товар відсутній |
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PMDXB1200UPEZ | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; Trench; unipolar; -30V; -260mA; Idm: -1.7A Type of transistor: P-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: -30V Drain current: -260mA Pulsed drain current: -1.7A Case: DFN1010B-6; SOT1216 Gate-source voltage: ±8V On-state resistance: 2.4Ω Mounting: SMD Gate charge: 1.2nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |