PMEG150G20ELR-QX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: DIODE GEN PURP 150V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 150V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
на замовлення 2460 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 30.33 грн |
| 13+ | 22.74 грн |
| 100+ | 13.66 грн |
| 500+ | 11.87 грн |
| 1000+ | 8.07 грн |
Відгуки про товар
Написати відгук
Технічний опис PMEG150G20ELR-QX Nexperia USA Inc.
Description: DIODE GEN PURP 150V 2A SOD123W, Packaging: Tape & Reel (TR), Package / Case: SOD-123W, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 14 ns, Technology: SiGe (Silicon Germanium), Capacitance @ Vr, F: 70pF @ 1V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: SOD-123W, Operating Temperature - Junction: 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A, Current - Reverse Leakage @ Vr: 30 nA @ 150 V, Qualification: AEC-Q101.
Інші пропозиції PMEG150G20ELR-QX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
PMEG150G20ELR-QX | Виробник : Nexperia USA Inc. |
Description: DIODE GEN PURP 150V 2A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 14 ns Technology: SiGe (Silicon Germanium) Capacitance @ Vr, F: 70pF @ 1V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A Current - Reverse Leakage @ Vr: 30 nA @ 150 V Qualification: AEC-Q101 |
товар відсутній |
|
 |
PMEG150G20ELR-QX | Виробник : Nexperia |
 Rectifiers PMEG150G20ELR-Q/SOD123W/SOD2 |
товар відсутній |