Технічний опис PMEG3010EH-QX NEXPERIA
Description: PMEG3010EH-Q/SOD123F/SOD2, Packaging: Tape & Reel (TR), Package / Case: SOD-123F, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 55pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SOD-123F, Operating Temperature - Junction: 150°C, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A, Current - Reverse Leakage @ Vr: 150 µA @ 30 V.
Інші пропозиції PMEG3010EH-QX
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| PMEG3010EH-QX | Виробник : Nexperia USA Inc. |
Description: PMEG3010EH-Q/SOD123F/SOD2 Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 55pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 30 V |
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| PMEG3010EH-QX | Виробник : Nexperia USA Inc. |
Description: PMEG3010EH-Q/SOD123F/SOD2 Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 55pF @ 1V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A Current - Reverse Leakage @ Vr: 150 µA @ 30 V |
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PMEG3010EH-QX | Виробник : Nexperia |
 Schottky Diodes & Rectifiers PMEG3010EH-Q/SOD123F/SOD2 |
товар відсутній |