PMH950UPEH Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET P-CH 20V 530MA DFN0606-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 370mW (Ta), 2.2W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN0606-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 3.27 грн |
| 30000+ | 2.95 грн |
| 50000+ | 2.62 грн |
Відгуки про товар
Написати відгук
Технічний опис PMH950UPEH Nexperia USA Inc.
Description: MOSFET P-CH 20V 530MA DFN0606-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 530mA (Ta), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V, Power Dissipation (Max): 370mW (Ta), 2.2W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: DFN0606-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4 V, Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V.
Інші пропозиції PMH950UPEH за ціною від 2.86 грн до 23.09 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
PMH950UPEH | Виробник : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 530MA DFN0606-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 530mA (Ta) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V Power Dissipation (Max): 370mW (Ta), 2.2W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: DFN0606-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.5 nC @ 4 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V |
на замовлення 56747 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||||||
 |
PMH950UPEH | Виробник : Nexperia |
MOSFET PMH950UPE/SOT8001/DFN0606-3 |
на замовлення 11762 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||||
| PMH950UPEH | Виробник : NEXPERIA |
20 V, P-channel Trench MOSFET |
товар відсутній |
||||||||||||||||||||||
| PMH950UPEH | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -360mA; Idm: -2A Type of transistor: P-MOSFET Mounting: SMD Case: DFN0606-3; SOT8001 On-state resistance: 2.3Ω Kind of package: reel; tape Technology: Trench Drain-source voltage: -20V Drain current: -360mA Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 0.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -2A кількість в упаковці: 10000 шт |
товар відсутній |
||||||||||||||||||||||
| PMH950UPEH | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -360mA; Idm: -2A Type of transistor: P-MOSFET Mounting: SMD Case: DFN0606-3; SOT8001 On-state resistance: 2.3Ω Kind of package: reel; tape Technology: Trench Drain-source voltage: -20V Drain current: -360mA Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 0.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -2A |
товар відсутній |