Технічний опис PMN120ENEX Nexperia
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A, Type of transistor: N-MOSFET, Technology: Trench, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 1.5A, Pulsed drain current: 10A, Case: SC74; SOT457; TSOP6, Gate-source voltage: ±20V, On-state resistance: 246mΩ, Mounting: SMD, Gate charge: 7.4nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 3000 шт.
Інші пропозиції PMN120ENEX
| Фото | Назва | Виробник | Інформація |
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PMN120ENEX | Виробник : NEXPERIA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.5A Pulsed drain current: 10A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 246mΩ Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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PMN120ENEX | Виробник : Nexperia USA Inc. |
Description: PMN120ENE - 60V, N-CHANNEL TRENC |
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PMN120ENEX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 1.5A; Idm: 10A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.5A Pulsed drain current: 10A Case: SC74; SOT457; TSOP6 Gate-source voltage: ±20V On-state resistance: 246mΩ Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |