PMN20ENAX Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 40V 6.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.2A, 10V
Power Dissipation (Max): 652mW (Ta), 7.5W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 10.68 грн |
| 6000+ | 9.76 грн |
| 9000+ | 9.06 грн |
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Технічний опис PMN20ENAX Nexperia USA Inc.
Description: MOSFET N-CH 40V 6.2A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 6.2A, 10V, Power Dissipation (Max): 652mW (Ta), 7.5W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PMN20ENAX за ціною від 9.69 грн до 31.62 грн
| Фото | Назва | Виробник | Інформація |
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PMN20ENAX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 6.2A 6TSOP Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 6.2A, 10V Power Dissipation (Max): 652mW (Ta), 7.5W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 582 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 21658 шт: термін постачання 21-31 дні (днів) |
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| PMN20ENAX | Виробник : NEXPERIA |
40 V, N-channel Trench MOSFET |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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PMN20ENAX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 4.4A; Idm: 25A Mounting: SMD Pulsed drain current: 25A Gate charge: 17nC Polarisation: unipolar Technology: Trench Drain current: 4.4A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SC74; SOT457; TSOP6 On-state resistance: 44mΩ кількість в упаковці: 3000 шт |
товар відсутній |
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PMN20ENAX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 4.4A; Idm: 25A Mounting: SMD Pulsed drain current: 25A Gate charge: 17nC Polarisation: unipolar Technology: Trench Drain current: 4.4A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SC74; SOT457; TSOP6 On-state resistance: 44mΩ |
товар відсутній |