PMN40UPE,115 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET P-CH 20V 4.7A 6TSOP
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 4.5V
Power Dissipation (Max): 500mW (Ta), 8.33W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 10 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1480+ | 13.2 грн |
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Технічний опис PMN40UPE,115 Nexperia USA Inc.
Description: MOSFET P-CH 20V 4.7A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SC-74, SOT-457, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 4.5V, Power Dissipation (Max): 500mW (Ta), 8.33W (Tc), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 10 V.
Інші пропозиції PMN40UPE,115
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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PMN40UPE,115 | Виробник : Nexperia |
MOSFET PMN40UPE/SC-74/REEL 7" Q1/T1 * |
на замовлення 1220 шт: термін постачання 21-30 дні (днів) |
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PMN40UPE,115 | Виробник : NEXPERIA |
Trans MOSFET P-CH 20V 4.7A 6-Pin TSOP T/R |
товар відсутній |
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PMN40UPE,115 | Виробник : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 4.7A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 4.5V Power Dissipation (Max): 500mW (Ta), 8.33W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 10 V |
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PMN40UPE,115 | Виробник : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 4.7A 6TSOP Packaging: Cut Tape (CT) Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 3A, 4.5V Power Dissipation (Max): 500mW (Ta), 8.33W (Tc) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 10 V |
товар відсутній |