PMPB20ENZ Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 30V 7.2A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 7A, 10V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V
на замовлення 2850 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 28.89 грн |
| 13+ | 22.25 грн |
| 100+ | 15.17 грн |
| 500+ | 10.68 грн |
| 1000+ | 8.01 грн |
Відгуки про товар
Написати відгук
Технічний опис PMPB20ENZ Nexperia USA Inc.
Description: MOSFET N-CH 30V 7.2A DFN2020MD-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), Rds On (Max) @ Id, Vgs: 19.5mOhm @ 7A, 10V, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: DFN2020MD-6, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V.
Інші пропозиції PMPB20ENZ за ціною від 5.87 грн до 30.45 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PMPB20ENZ | Виробник : Nexperia |
MOSFET PMPB20EN/SOT1220/SOT1220 |
на замовлення 6066 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
 |
PMPB20ENZ | Виробник : NEXPERIA |
Trans MOSFET N-CH 30V 7.2A 6-Pin DFN-MD EP T/R |
товар відсутній |
|||||||||||||||||
 |
PMPB20ENZ | Виробник : Nexperia |
Trans MOSFET N-CH 30V 7.2A 6-Pin DFN-MD EP T/R |
товар відсутній |
|||||||||||||||||
| PMPB20ENZ | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 4.6A; Idm: 30A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.6A Pulsed drain current: 30A Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 10.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 3000 шт |
товар відсутній |
||||||||||||||||||
|
|
PMPB20ENZ | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 7.2A DFN2020MD-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 7A, 10V Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 10 V |
товар відсутній |
|||||||||||||||||
| PMPB20ENZ | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 4.6A; Idm: 30A Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.6A Pulsed drain current: 30A Case: DFN2020MD-6; SOT1220 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 10.8nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |