Продукція > NXP USA INC. > PMPB29XNE,115

PMPB29XNE,115 NXP USA Inc.

Name: PMPB29XNE,115
Brand: NXP USA Inc.
SKU: 22938434-3
Price: 5.94 UAH
Availability: InStock

PHGLS25778-1.pdf?t.download=true&u=5oefqw

Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 5A DFN2020MD-6
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V

на замовлення 19000 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
3184+	5.94 грн

Мінімальне замовлення: 3184

Відгуки про товар

Написати відгук

Технічний опис PMPB29XNE,115 NXP USA Inc.

Description: MOSFET N-CH 30V 5A DFN2020MD-6, Packaging: Bulk, Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V, Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: DFN1010B-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V.