Технічний опис PMPB30XPEX NEXPERIA
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.9A; Idm: -25A, Mounting: SMD, Case: DFN2020MD-6; SOT1220, Kind of package: reel; tape, Features of semiconductor devices: ESD protected gate, Gate charge: 19nC, Technology: Trench, Kind of channel: enhanced, Gate-source voltage: -12...8V, Pulsed drain current: -25A, Drain-source voltage: -20V, Drain current: -3.9A, On-state resistance: 52mΩ, Type of transistor: P-MOSFET, Polarisation: unipolar, кількість в упаковці: 3000 шт.
Інші пропозиції PMPB30XPEX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| PMPB30XPEX | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.9A; Idm: -25A Mounting: SMD Case: DFN2020MD-6; SOT1220 Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 19nC Technology: Trench Kind of channel: enhanced Gate-source voltage: -12...8V Pulsed drain current: -25A Drain-source voltage: -20V Drain current: -3.9A On-state resistance: 52mΩ Type of transistor: P-MOSFET Polarisation: unipolar кількість в упаковці: 3000 шт |
товар відсутній |
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| PMPB30XPEX | Виробник : Nexperia | MOSFET PMPB30XPE/SOT1220/SOT1220 |
товар відсутній |
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| PMPB30XPEX | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.9A; Idm: -25A Mounting: SMD Case: DFN2020MD-6; SOT1220 Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 19nC Technology: Trench Kind of channel: enhanced Gate-source voltage: -12...8V Pulsed drain current: -25A Drain-source voltage: -20V Drain current: -3.9A On-state resistance: 52mΩ Type of transistor: P-MOSFET Polarisation: unipolar |
товар відсутній |