PMT200EPEX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 70V 2.4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 167mOhm @ 2.4A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 822 pF @ 35 V
Description: MOSFET P-CH 70V 2.4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 167mOhm @ 2.4A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 70 V
Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 822 pF @ 35 V
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1000+ | 12.72 грн |
2000+ | 10.95 грн |
5000+ | 10.39 грн |
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Технічний опис PMT200EPEX Nexperia USA Inc.
Description: MOSFET P-CH 70V 2.4A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), Rds On (Max) @ Id, Vgs: 167mOhm @ 2.4A, 10V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 70 V, Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 822 pF @ 35 V.
Інші пропозиції PMT200EPEX за ціною від 9.57 грн до 36.73 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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PMT200EPEX | Виробник : Nexperia USA Inc. |
Description: MOSFET P-CH 70V 2.4A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 167mOhm @ 2.4A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 70 V Gate Charge (Qg) (Max) @ Vgs: 15.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 822 pF @ 35 V |
на замовлення 7390 шт: термін постачання 21-31 дні (днів) |
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PMT200EPEX | Виробник : Nexperia | MOSFET PMT200EPE/SOT223/SC-73 |
на замовлення 29316 шт: термін постачання 21-30 дні (днів) |
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PMT200EPEX | Виробник : NEXPERIA | P-channel Trench MOSFET |
товар відсутній |
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PMT200EPEX | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -70V; -1.5A; Idm: -9.7A Mounting: SMD Case: SC73; SOT223 Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 15.9nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -9.7A Drain-source voltage: -70V Drain current: -1.5A On-state resistance: 0.25Ω Type of transistor: P-MOSFET Polarisation: unipolar кількість в упаковці: 1000 шт |
товар відсутній |
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PMT200EPEX | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -70V; -1.5A; Idm: -9.7A Mounting: SMD Case: SC73; SOT223 Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Gate charge: 15.9nC Technology: Trench Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -9.7A Drain-source voltage: -70V Drain current: -1.5A On-state resistance: 0.25Ω Type of transistor: P-MOSFET Polarisation: unipolar |
товар відсутній |