PMV30XPAR Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 20V 4.9A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 8V
Power Dissipation (Max): 610mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 4.9A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 8V
Power Dissipation (Max): 610mW (Ta), 8.3W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.47 грн |
6000+ | 6.9 грн |
9000+ | 6.21 грн |
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Технічний опис PMV30XPAR Nexperia USA Inc.
Description: MOSFET P-CH 20V 4.9A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 8V, Power Dissipation (Max): 610mW (Ta), 8.3W (Tc), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PMV30XPAR за ціною від 5.87 грн до 30.45 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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PMV30XPAR | Виробник : Nexperia USA Inc. |
Description: MOSFET P-CH 20V 4.9A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 4.9A, 8V Power Dissipation (Max): 610mW (Ta), 8.3W (Tc) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 22170 шт: термін постачання 21-31 дні (днів) |
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PMV30XPAR | Виробник : Nexperia | MOSFET PMV30XPA/SOT23/TO-236AB |
на замовлення 10492 шт: термін постачання 21-30 дні (днів) |
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PMV30XPAR | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.1A; Idm: -20A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Pulsed drain current: -20A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 53mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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PMV30XPAR | Виробник : NEXPERIA | Trans MOSFET P-CH 20V 4.9A Automotive AEC-Q101 3-Pin SOT-23 T/R |
товар відсутній |
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PMV30XPAR | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -3.1A; Idm: -20A Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Pulsed drain current: -20A Case: SOT23; TO236AB Gate-source voltage: ±12V On-state resistance: 53mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |