PMV50ENEAR Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 30V 3.9A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3.9A, 10V
Power Dissipation (Max): 510mW (Ta), 3.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 276 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.82 грн |
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Технічний опис PMV50ENEAR Nexperia USA Inc.
Description: MOSFET N-CH 30V 3.9A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), Rds On (Max) @ Id, Vgs: 43mOhm @ 3.9A, 10V, Power Dissipation (Max): 510mW (Ta), 3.9W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-236AB, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 276 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції PMV50ENEAR за ціною від 6.14 грн до 31.16 грн
| Фото | Назва | Виробник | Інформація |
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PMV50ENEAR | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 3.9A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 3.9A, 10V Power Dissipation (Max): 510mW (Ta), 3.9W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-236AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 276 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3924 шт: термін постачання 21-31 дні (днів) |
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PMV50ENEAR | Виробник : Nexperia |
MOSFET PMV50ENEA/SOT23/TO-236AB |
на замовлення 30675 шт: термін постачання 21-30 дні (днів) |
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PMV50ENEAR | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 5.5A Pulsed drain current: 5.5A Gate charge: 10nC Polarisation: unipolar Technology: Trench Features of semiconductor devices: ESD protected gate Drain current: 2.5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT23; TO236AB On-state resistance: 69mΩ Mounting: SMD кількість в упаковці: 3000 шт |
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PMV50ENEAR | Виробник : NEXPERIA |
Trans MOSFET N-CH 30V 3.9A Automotive 3-Pin SOT-23 T/R |
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PMV50ENEAR | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 2.5A; Idm: 5.5A Pulsed drain current: 5.5A Gate charge: 10nC Polarisation: unipolar Technology: Trench Features of semiconductor devices: ESD protected gate Drain current: 2.5A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT23; TO236AB On-state resistance: 69mΩ Mounting: SMD |
товар відсутній |