Технічний опис PN5179-D26Z ON Semiconductor
Description: RF TRANS NPN 12V 2GHZ TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Gain: 15dB, Power - Max: 350mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V, Frequency - Transition: 2GHz, Noise Figure (dB Typ @ f): 5dB @ 200MHz, Supplier Device Package: TO-92-3, Part Status: Obsolete.
Інші пропозиції PN5179-D26Z
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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PN5179_D26Z | Виробник : onsemi |
 Description: RF TRANS NPN 12V 2GHZ TO92-3Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Gain: 15dB Power - Max: 350mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Frequency - Transition: 2GHz Noise Figure (dB Typ @ f): 5dB @ 200MHz Supplier Device Package: TO-92-3 Part Status: Obsolete |
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