Продукція > NEXPERIA USA INC. > PRMB11Z

PRMB11Z Nexperia USA Inc.

Name: PRMB11Z
Brand: Nexperia USA Inc.
SKU: 13488943-3
Price: 2 UAH
Availability: InStock

Виробник: Nexperia USA Inc.
Description: TRANS PREBIAS 2PNP 50V DFN1412-6
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 480mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 180MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN1412-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101

на замовлення 144150 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
9072+	2 грн

Мінімальне замовлення: 9072

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Технічний опис PRMB11Z Nexperia USA Inc.

Description: TRANS PREBIAS 2PNP 50V DFN1412-6, Packaging: Tape & Reel (TR), Package / Case: 6-XFDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 480mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Frequency - Transition: 180MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: DFN1412-6, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

Інші пропозиції PRMB11Z

Назва	Виробник	Інформація	Доступність
PRMB11Z	Виробник : Nexperia USA Inc.	Description: TRANS PREBIAS 2PNP 50V DFN1412-6 Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 480mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 180MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: DFN1412-6 Grade: Automotive Part Status: Active Qualification: AEC-Q101	товар відсутній
PRMB11Z	Виробник : Nexperia USA Inc.	Description: TRANS PREBIAS 2PNP 50V DFN1412-6 Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 480mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Frequency - Transition: 180MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: DFN1412-6 Part Status: Active Grade: Automotive Qualification: AEC-Q101	товар відсутній
PRMB11Z	Виробник : Nexperia	Bipolar Transistors - BJT PRMB11/SOT1268 DFN1412-6	товар відсутній